Lateral thin-film silicon-on-insulator (SOI) JFET device

Details Lateral thin-film silicon-on-insulator (SOI) JFET device Lateral thin-film silicon-on-insulator (SOI) JFET device

1998-12-14

1999-10-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257285, 257488, H01L 2980, H01L 31112

Patent

active

059733411

ABSTRACT:
A lateral thin-film Silicon-On-Insulator (SOI) JFET device includes a semiconductor substrate, a buried insulating on the substrate, and a JFET device in a thin semiconductor layer of a first conductivity type on the buried insulating layer. The device includes a source region of the first conductivity type, a control region of a second conductivity type which is laterally spaced apart from the source region and a lateral drift region of the first conductivity type adjacent to the control region. A drain region of the first conductivity type is provided laterally spaced apart from the control region in a first lateral direction by the lateral drift region, and at least one field plate electrode is provided over at least a major portion of the lateral drift region and is insulated from the drift region by an insulation region. The control region includes control region segments which are spaced apart in a second lateral direction perpendicular to the first lateral direction by portions of the thin semiconductor layer, thus providing a normally "on" JFET device.

REFERENCES:
patent: 5130770 (1992-07-01), Blanc et al.
patent: 5246870 (1993-09-01), Merchant
patent: 5300448 (1994-04-01), Merchant et al.
patent: 5412241 (1995-05-01), Merchant
patent: 5420457 (1995-05-01), Shibib
patent: 5432377 (1995-07-01), Litwin
patent: 5889298 (1999-03-01), Plumton et al.

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