Method of manufacturing a static induction type switching device

Details Method of manufacturing a static induction type switching device Method of manufacturing a static induction type switching device

Filed on

1990-05-02

Date issued

1992-09-01

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437911, 437160, 437162, 437203, 437 97, H01L 21265

Type

Patent

Status

active

Patent number

051438593

Description

ABSTRACT:
In a static induction type switching device having gate regions buried in a semiconductor substrate, the gate regions are formed by polysilicon layers and diffusion layers which can be formed by diffusion from the polysilicon layers serving as diffusion sources. Therefore, dimensional accuracy, electric properties etc. can be improved such that channel regions can be accurately defined between the gate regions in the semiconductor substrate, and the channel regions can be formed through use of the semiconductor substrate etc.

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IEEE Transactions on Electron Devices, vol. ED-22, No. 4, Apr. 1975, Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor) Jun-Ichi Nishizawa et al.
IEEE Transactions on Electron Devices, vol. ED-25, No. 10, Oct. 1978, Vertical Channel Field-Controlled Thyristors with High Gain and Fast Switching Speeds, Bruce W. Wessels et al.

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