Lateral super-junction semiconductor device

Details Lateral super-junction semiconductor device Lateral super-junction semiconductor device

2006-02-21

2006-02-21

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S341000, C257S401000, C257S492000, C257S493000

Reexamination Certificate

active

07002211

ABSTRACT:
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 5710455 (1998-01-01), Bhatnagar et al.
patent: 6097063 (2000-08-01), Fujihira
patent: 6297534 (2001-10-01), Kawaguchi et al.
patent: 6492691 (2002-12-01), Magri' et al.
patent: WO 01/69682 (2001-09-01), None

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