Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-02-20
1999-02-02
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257903, H01L 2978, H01L 2904, H01L 2711
Patent
active
058669213
ABSTRACT:
A substrate transistor is formed, including a gate insulation region formed on a substrate, spaced apart source/drain regions formed in the substrate, and a gate electrode formed on the gate insulation region, disposed between the spaced apart source/drain regions, the gate electrode having a sidewall portion. A lateral thin film transistor is formed, including a sidewall gate insulation region on the sidewall portion of the gate electrode and a lateral channel region on the sidewall gate insulation region such that the gate electrode controls the current in the lateral channel region. A first one of the spaced apart source/drain regions of the substrate transistor preferably includes a lightly-doped inner portion disposed adjacent the gate electrode and a heavily-doped outer portion disposed adjacent the lightly-outer portion, opposite the gate electrode. The lateral channel region preferably is electrically connected to a second one of the spaced-apart source/drain regions of the substrate transistor. The sidewall gate insulation region contacts the lateral channel region at a first surface of the lateral channel region, and an auxiliary gate may be formed on a second surface of the lateral channel region, the auxiliary gate including an auxiliary gate insulation region on the lateral channel region and an auxiliary gate electrode on the auxiliary gate insulation region. The auxiliary gate electrode preferably is formed on an insulation region formed on the substrate, extends from the insulation region to overlie portions of the lateral channel region.
REFERENCES:
patent: 4554572 (1985-11-01), Chatterjee
patent: 4980732 (1990-12-01), Okazawa
patent: 5173754 (1992-12-01), Manning
patent: 5214295 (1993-05-01), Manning
patent: 5324860 (1994-06-01), Pfiester et al.
patent: 5640023 (1997-06-01), Balasinski et al.
Munson Gene M.
Samsung Electronics Co,. Ltd.
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