Lateral SOI component having a reduced on resistance

Details Lateral SOI component having a reduced on resistance Lateral SOI component having a reduced on resistance

2006-09-26

2009-06-30

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S335000, C257S494000, C257SE21356, C257SE21358

Reexamination Certificate

active

07554157

ABSTRACT:
An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.

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