Lateral short-channel DMOS, method for manufacturing same...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S335000

Reexamination Certificate

active

10490509

ABSTRACT:
A lateral short-channel DMOS includes an epitaxial layer formed on a semiconductor substrate. A first conductivity-type well is formed in the epitaxial layer. A second conductivity-type well is formed in the first conductivity-type well and includes a channel forming region. A source region is formed in the second conductivity-type well. A first conductivity-type ON resistance lowering well is formed in the epitaxial layer so as to contact the first conductivity-type well but not the second conductivity-type well, and includes a higher concentration of a first conductivity-type dopant than the first conductivity-type well. A drain region is formed in the first conductivity-type ON resistance lowering well. A gate electrode is formed above and insulated from at least the channel forming region.

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Japanese Publication No. 8-213617, Published Aug. 20, 1996 with English Equivalent of Abstract from Corresponding Great Britain Publication No. 2295052, Published May 16, 1996; and Translation of Figure 1 from JP Publication No. 8-213617.
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