Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000
Reexamination Certificate
active
10490509
ABSTRACT:
A lateral short-channel DMOS includes an epitaxial layer formed on a semiconductor substrate. A first conductivity-type well is formed in the epitaxial layer. A second conductivity-type well is formed in the first conductivity-type well and includes a channel forming region. A source region is formed in the second conductivity-type well. A first conductivity-type ON resistance lowering well is formed in the epitaxial layer so as to contact the first conductivity-type well but not the second conductivity-type well, and includes a higher concentration of a first conductivity-type dopant than the first conductivity-type well. A drain region is formed in the first conductivity-type ON resistance lowering well. A gate electrode is formed above and insulated from at least the channel forming region.
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Le Thao X.
Lowe Hauptman & Berner LLP
Shindengen Electric Manufacturing Co. Ltd.
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