Lateral semiconductor-on-insulator (SOI) semiconductor device ha

Details Lateral semiconductor-on-insulator (SOI) semiconductor device ha Lateral semiconductor-on-insulator (SOI) semiconductor device ha

1993-11-10

1995-01-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257343, 257 77, 257618, 257347, H01L 2910, H01L 2701

Patent

active

053789121

ABSTRACT:
A lateral Semiconductor-On-Insulator (SOI) device includes a substrate, a buried insulating layer on the substrate, and a lateral semiconductor device such as an LDMOS transistor, an LIGBT, a lateral thyristor, or a lateral high-voltage diode on the insulating layer. The semiconductor device (in the case of an LDMOS transistor) includes a source region, a channel region, an insulated gate electrode over the channel region, a lateral drift region on the buried insulating layer and having a substantially linearly graded lateral doping profile, and a drain region which is laterally spaced apart from the channel region and connected to the channel region by the drift region. In order to substantially improve the breakdown voltage of the device, typically a high-voltage power device, while reducing the "on" resistance, the lateral drift region is formed of a wide bandgap semiconductor material such as silicon carbide.

REFERENCES:
patent: 4922327 (1990-05-01), Mena et al.
patent: 4963951 (1990-10-01), Adler et al.
patent: 4983538 (1991-01-01), Gotou
patent: 5059547 (1991-10-01), Shirai
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5246870 (1993-09-01), Merchant

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