Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-12-08
1995-01-17
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257492, 257493, H01L 2701, H01L 2713, H01L 2978
Patent
active
053828186
ABSTRACT:
A lateral Semiconductor-On-Insulator (SOI) device includes a substrate, a buried insulating layer on the substrate, and a lateral semiconductor device such as an LDMOS transistor, an LIGBT or a lateral thyristor on the insulating layer. The semiconductor device (in the case of an LDMOS transistor) includes a source region, a channel region, an insulated gate electrode over the channel region, a lateral drift region formed of a continuous layer of a lightly-doped semiconductor material on the buried insulating layer, and a drain contact region which is laterally spaced apart from the channel region and connected to the channel region by the drift region. A buried diode is formed in the substrate, and is electrically coupled to the drain contact region by a portion of the drift region which extends laterally in the region between the drain contact region and the buried diode.
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"Novel Silicon-On-Insulator MOSFET for High-Voltage Integrated Circuits" Electronics Letters, vol. 25, No. 8 Apr. 13, 1989, P. Ratnam.
"Realization of High Breakdown Voltage (>700v) In Thin SOI Devices" S. Merchant et al, 3rd Int. Symp. on Power Semiconductor Devices and IC's pp. 31-35, 1991.
"Thin Layer High-Voltage Devices" (Resurf Devices) J. A. Appels et al, Philips J. Res. 35, 1-13, 1980.
"Extension of Resurf Principle to Dielectrically Isolated Power Devices" Y. S. Huang et al, 3rd Int. Symp. on Power Semiconductor Devices and IC's pp. 27-30, 1991.
"High Voltage Silicon-On-Insulator (SOI) MOSFETs" Q. Lu et al, 3rd Int. Symp. on Power Semiconductor Devices and IC's pp. 36-39, 1991.
Biren Steven R.
Carroll J.
Philips Electronics North America Corporation
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