Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S343000, C257S409000, C257S491000, C257S492000, C257S493000, C438S270000, C438S140000, C438S454000
Reexamination Certificate
active
06906381
ABSTRACT:
A lateral semiconductor device (20) such as LDMOS, a LIGBT, a lateral diode, a lateral GTO, a lateral JFET or a lateral BJT, comprising a drift region (12) having a first surface (22) and a first conductivity type, first and second conductive (4, 8) extending into the drift region from the first surface. The lateral semiconductor device further comprises an additional region (24) or several additional regions, having a second conductivity type, between the first and second semiconductor regions (4, 8), the additional region extending into the drift region from the first surface (22), wherein the additional region forms a junction dividing the electric field between the first and second semiconductor regions when a current path is established between the first and second semiconductor regions. This allows the doping concentration of the drift region to be increased, thereby lowering the on-resistance of the device.
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Cezac Nathalie
Morancho Frederic
Pages Irenee
Peyre-Lavigne Andre
Rossel Pierre
Erdem Fazli
Flynn Nathan J.
Freescale Semiconductor Inc.
King Robert L.
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