Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-10
2007-07-10
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27091, C257S242000
Reexamination Certificate
active
11155960
ABSTRACT:
A semiconductor device has a semiconductor substrate and a trench region having at least one trench disposed on a surface of the semiconductor substrate and having a trench length, a trench width and a trench depth. A well region is disposed in the substrate and surrounds the trench region. A source region and a drain region are disposed above the well region and around respective inner walls of the trench. The source region and the drain region are disposed in confronting relation relative one another and have a conductivity type different from a conductivity type of the well region. A gate insulating film is disposed on the surface of the semiconductor substrate and on an inner base and the inner walls of the trench. A gate electrode is disposed on the gate insulating film. A length of the gate electrode is shorter than the trench length and equal to a distance between the source region and the drain region.
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Adams & Wilks
Le Thao P.
Seiko Instruments Inc.
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