Lateral semiconductor device comprising two layers of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29066, C257SE29261, C257SE21417

Reexamination Certificate

active

08053835

ABSTRACT:
A semiconductor element includes an insulating outer layer that includes electric contact connections of a first conductive type. These connections are connected to contact areas located beneath the insulating surface layer, of which connections at least one is of a first conductive type. At least one of the contact areas and a further area that includes two layers of mutually different conductive types disposed between the contact areas, are covered by a layer of a second conductive type of material. This second layer is, in turn, covered with an insulating layer on at least that side which lies distal from the surface layer.

REFERENCES:
patent: 5059547 (1991-10-01), Shirai
patent: 5146298 (1992-09-01), Eklund
patent: 5241210 (1993-08-01), Nakagawa et al.
patent: 5313082 (1994-05-01), Eklund
patent: 5382818 (1995-01-01), Pein
patent: 5654561 (1997-08-01), Watabe
patent: 5710444 (1998-01-01), Neubrand et al.
patent: 5731603 (1998-03-01), Nakagawa et al.
patent: 5796125 (1998-08-01), Matsudai et al.
patent: 5874768 (1999-02-01), Yamaguchi et al.
patent: 5886384 (1999-03-01), Soderbarg et al.
patent: 5898201 (1999-04-01), Hsu et al.
patent: 5943579 (1999-08-01), Tran
patent: 6069396 (2000-05-01), Funaki
patent: 6191453 (2001-02-01), Petruzzello et al.
patent: 6198130 (2001-03-01), Nobuto et al.
patent: 6211551 (2001-04-01), Suzumura et al.
patent: 6303492 (2001-10-01), Rhodes et al.
patent: 6307224 (2001-10-01), Shirai
patent: 6380566 (2002-04-01), Matsudai et al.
patent: 31 03 785 (1981-12-01), None
patent: 0 550 015 (1993-07-01), None
patent: 02-185067 (1990-07-01), None
patent: WO 98/05076 (1998-02-01), None
“Performance Innovative Trends in RESURF Technology,” by Adrian W. Ludikhuize, Philips Research, Eindhoven, The Netherlands, 2001.

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