Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Patent
1995-09-19
1997-05-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
257501, 257508, 257520, 257493, H01L 2358, H01L 2704
Patent
active
056314914
ABSTRACT:
A lateral semiconductor device with enhanced breakdown characteristics includes a semiconductor substrate composite of first and second semiconductor substrates bonded to one another via an oxide film. An insulation film is buried in a separation trench which extends from a major surface of the first semiconductor substrate to the oxide film. An element region of 10 .mu.m or more in thickness is isolated by the separation trench from other element regions. First and second diffusion regions of opposite conductivity type are formed on the element region. The potential of the second substrate is fixed at one-third of the designed maximum breakdown voltage of the lateral semiconductor device. Alternatively, if the element region is 10 .mu.m or less in thickness, the potential of the second substrate is fixed at one-half of the designed maximum breakdown voltage of the lateral semiconductor device.
REFERENCES:
patent: 5373183 (1994-12-01), Beasom
patent: 5448100 (1995-09-01), Beasom
Fuji Electric & Co., Ltd.
Guay John
Jackson Jerome
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