Lateral semiconductor arrangement for power ICS

Details Lateral semiconductor arrangement for power ICS Lateral semiconductor arrangement for power ICS

1996-07-19

1998-09-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257133, 257143, 257335, 257337, 257378, 257565, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058014209

ABSTRACT:
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in an n-channel lateral semiconductor device or by a p-type region in a p-channel lateral semiconductor device. Connecting the n-type region in the n-channel lateral semiconductor device or the p-type region in the p-channel lateral semiconductor device at a same potential as a first main electrode suppresses operation of parasitic transistors, as well as prevents carrier accumulation in isolated regions or a substrate. As a result, a switching loss of the lateral semiconductor device is greatly reduced, a switching speed of the lateral semiconductor device is improved, and a current capacity of the lateral semiconductor device is increased.

REFERENCES:
patent: 5286995 (1994-02-01), Malhi
patent: 5349212 (1994-09-01), Seki
patent: 5485027 (1996-01-01), Williams et al.
patent: 5654560 (1997-08-01), Nishizawa et al.

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