Lateral SCR structure for ESD protection in trench isolated tech

Details Lateral SCR structure for ESD protection in trench isolated tech Lateral SCR structure for ESD protection in trench isolated tech

1998-05-27

2000-06-27

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257371, 257175, 361 56, 361 58, H01L 2974

Patent

active

060810025

ABSTRACT:
A protection device for trench isolated technologies. The protection device includes a lateral SCR (100) that incorporates a triggering MOS transistor (120) with a first gate electrode (116) connected to the cathode (112) of the SCR (100). The anode (110) of the lateral SCR (100) is separated from the nearest source/drain region (122) of the triggering MOS transistor (120) by a second gate electrode (132) rather than by trench isolation. By using the second gate electrode (132) for isolation instead of trench isolation, the surface conduction of the lateral SCR (100) in unimpeded.

REFERENCES:
patent: 5400202 (1995-03-01), Metz et al.
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5637892 (1997-06-01), Leach
patent: 6016002 (2000-01-01), Chen et al.

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