Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-02-18
2000-07-04
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257266, 257413, 257755, H01L 31113, H01L 31119
Patent
active
060842776
ABSTRACT:
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate design in which the gate structure is coupled to the gate electrode through contacts at a plurality of locations. The gate electrode is disposed over the gate structure along the length of a MOSFET finger. In one embodiment, the gate electrode is coupled to the gate structure through contacts at the ends of the MOSFET finger such that there is a contact-free portion of the gate region between the contacts.
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Disney Donald R.
Djenguerian Alex B.
Monin, Jr. Donald L.
Power Integrations, Inc.
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