Lateral power MOSFET for high switching speeds

Details Lateral power MOSFET for high switching speeds Lateral power MOSFET for high switching speeds

2006-10-03

2006-10-03

Le, Thao X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257SE29256

Reexamination Certificate

active

07115958

ABSTRACT:
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.

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