Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Patent
1999-06-17
2000-09-26
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
257751, 438300, H01L 2940
Patent
active
061246271
ABSTRACT:
A MOSFET (100) having a heterostructure raised source/drain region and method of making the same. A two layer raised source drain region (106) is located adjacent a gate structure (112). The first layer (106a) is a barrier layer comprising a first material (e.g., SiGe, SiC). The second layer (106b) comprises a second, different material (e.g. Si). The material of the barrier layer (106a) is chosen to provide an energy band barrier between the raised source/drain region (106) and the channel region (108).
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Liu William U.
Rodder Mark S.
Brady III W. James
Garner Jacqueline J.
Hardy David
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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