Lateral MOSFET

Details Lateral MOSFET Lateral MOSFET

1991-10-16

1994-04-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 29784, H01L 2968

Patent

active

053069382

ABSTRACT:
A lateral MOSFET includes a back gate region, a part of its surface being a channel region. The back gate region surrounds the drain region, while being in contact with a part of the periphery of the drain region. With this configuration, when a high voltage electrostatic surge appears at the drain electrode, a surge current will disperse from the drain region toward the surrounding back gate region. As a result, a rise in the electric potential at the drain region is suppressed. Thus, the electric potential will not exceed the dielectric strength of the gate insulating film to suppress a breakdown of the gate insulating film and an electrostatic breakdown of the device.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4661838 (1987-04-01), Wildi et al.
patent: 4985745 (1991-01-01), Kitahara et al.
patent: 5068700 (1991-11-01), Yamaguchi et al.
patent: 5146298 (1992-09-01), Eklund
European Search Report, EP 91 11 7653, Sep. 3, 1992.

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