Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-21
2000-02-01
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257382, 257386, 257397, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060206179
ABSTRACT:
A lateral MOS transistor is described, in particular, though not exclusively, a transistor of the lateral DMOS type, in which the drain is provided with a weakly doped drain extension (8) to increase the breakdown voltage. This drain extension is also present at the ends of the drain digits, so that the "hard" drain (5) does not continue up to the edge (7) of the active region (6), but is separated therefrom by an interposed region. These regions do not contribute to the transistor effect. To reduce parasitic input capacitances, which correspond to these non-active regions, the gate poly (9) is provided in the active portion of the transistor only and is replaced in the non-active portions by poly (22) which is connected through to the source (4, 16). This poly acts as a gate which is permanently at 0 V, so that leakage currents in the non-active regions are prevented.
REFERENCES:
patent: 5731614 (1998-03-01), Ham
patent: 5883415 (1999-03-01), Tsuboi
"High Performance Silicon LDMOS Technology for 2GHz RF Power Amplifier Applications", by Wood et al., IEDM pp. 87-90.
Biren Steven R.
Ngo Ngan V.
U.S. Philips Corporation
LandOfFree
Lateral MOS transistor with weakly doped drain extension does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral MOS transistor with weakly doped drain extension, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral MOS transistor with weakly doped drain extension will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-939491