Lateral mode suppression in semiconductor bulk acoustic resonato

Details Lateral mode suppression in semiconductor bulk acoustic resonato Lateral mode suppression in semiconductor bulk acoustic resonato

1998-06-29

2000-11-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257416, 310311, 310321, 333187, 333189, 333191, 333194, 438 50, H01L 2982

Patent

active

061507032

ABSTRACT:
A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.

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