Lateral mode control in semiconductor lasers

Details Lateral mode control in semiconductor lasers Lateral mode control in semiconductor lasers

1977-05-16

1978-10-24

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041224108

ABSTRACT:
A semiconductor laser capable of fundamental lateral mode operation, includes a region of high conductivity in the form of a stripe in a semiconductor body and at a contacting surface of the body. The high conductivity region is between and contiguous to a pair of spaced regions also in the body and at the contacting surface. The pair of spaced regions are of a lower conductivity than the high conductivity region. The low and high conductivity regions are in electrical contact with a stripe contact and provide a focused current distribution from the stripe contact which is compatible with fundamental lateral mode operation of the laser.

REFERENCES:
patent: 3916339 (1975-10-01), Ladany et al.
patent: 4001719 (1977-01-01), Krupka

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