Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2010-10-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257S342000, C257SE29256, C257SE29261, C438S197000
Reexamination Certificate
active
07821064
ABSTRACT:
A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
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Rueb Michael
Schmitt Markus
Tolksdorf Carolin
Wahl Uwe
Willmeroth Armin
Coats & Bennett P.L.L.C.
Infineon Technologies Austria AG
Lin John
Warren Matthew E
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