Lateral MISFET and method for fabricating it

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S213000, C257S288000, C257S342000, C257SE29256, C257SE29261, C438S197000

Reexamination Certificate

active

07821064

ABSTRACT:
A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.

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Saito, Waturu, et al; A Novel Low On-Resistance Schottky-Barrier Diode with p-Buried Floating Layer Structure; IEEE Transactions on Electron Devices; vol. 51, No. 5, May 2004.

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