Lateral metal oxide semiconductor drain extension design

Details Lateral metal oxide semiconductor drain extension design Lateral metal oxide semiconductor drain extension design

2008-04-11

2010-12-07

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257SE29001, C257SE21409, C257S335000, C257S330000

Reexamination Certificate

active

07847351

ABSTRACT:
A semiconductor device comprising source and drain regions and insulating region and a plate structure. The source and drain regions are on or in a semiconductor substrate. The insulating region is on or in the semiconductor substrate and located between the source and drain regions. The insulating region has a thin layer and a thick layer. The thick layer includes a plurality of insulating stripes that are separated from each other and that extend across a length between the source and the drain regions. The plate structure is located between the source and the drain regions, wherein the plate structure is located on the thin layer and portions of the thick layer, the plate structure having one or more conductive bands that are directly over individual ones of the plurality of insulating stripes.

REFERENCES:
patent: 6876035 (2005-04-01), Abadeer et al.
patent: 6911696 (2005-06-01), Denison
patent: 6958515 (2005-10-01), Hower et al.
patent: 7145203 (2006-12-01), Wang
patent: 7476934 (2009-01-01), Yang et al.
patent: 2007/0267693 (2007-11-01), Chien et al.
patent: 2006136979 (2006-12-01), None

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