Lateral insulated gate field effect semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257339, 257343, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

053919084

ABSTRACT:
A semiconductor body (1) has a first region (2) of one conductivity type adjacent one major surface (3). Second and third regions (5 and 6) of the opposite conductivity type are provided within the first region (2) adjacent the one major surface (3) and an insulated gate structure (80) overlies a conduction channel region (9) between the second and third regions (5 and 6) for providing a gateable connection along the length (L) of the conduction channel region (9) between the second and third regions (5 and 6). The insulated gate structure (80) has a gate insulating region (81) and a gate conductive region (82) extending on the gate insulating region (81) and up onto a relatively thick insulating region (4) adjoining the gate insulating region (81). The gate insulating region (81) overlaps with the periphery (6a) of the portion (62) of the third region (6) adjacent the insulated gate structure (80) so that, in a direction (D) transverse to the length (L) of the conduction channel region (9), the gate conductive region (82) extends from the gate insulating region (81) up onto the relatively thick insulating region (4) over the first region (2). The corner (10b) at which the gate insulating region (81) adjoins the relatively thick insulating region (4) thus lies over the first region (2) and not over the third region (6), thereby reducing the electric field stress at the corner (10b).

REFERENCES:
patent: 4344080 (1982-08-01), Tihanyi
patent: 4609929 (1986-09-01), Jayaraman et al.
patent: 4721986 (1988-01-01), Kinzer
patent: 4920393 (1990-04-01), Kawakami
patent: 4990982 (1991-02-01), Omoto et al.
patent: 5055896 (1991-10-01), Williams et al.
patent: 5089871 (1992-02-01), Fujihara

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