Lateral high-voltage semiconductor device having an outwardly ex

Details Lateral high-voltage semiconductor device having an outwardly ex Lateral high-voltage semiconductor device having an outwardly ex

1999-06-29

2000-11-21

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257367, 257490, H01L 2358

Patent

active

061507024

ABSTRACT:
The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.

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