Lateral high-voltage PNP transistor

Details Lateral high-voltage PNP transistor Lateral high-voltage PNP transistor

1993-11-12

1995-05-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257518, 257557, 257587, 257588, 257659, H01L 2972

Patent

active

054204577

ABSTRACT:
A semiconductor device comprising a semiconductor substrate with a base region, a collector region and an emitter region in a lateral arrangement. The base region having a first conductivity type, and the collector and emitter regions having a second conductivity type. A first conductor layer is patterned over the substrate with a base contact portion, a collector contact portion and an emitter contact portion, with the base contact portion, the collector contact portion and the emitter contact portion contacting the base region, the collector region and the emitter region, respectively. A second conductor layer is patterned over a portion of the base region and is electrically coupled to the emitter contact portion, whereby the second conductor layer functions as an electrostatic shield for the base region.

REFERENCES:
patent: 3573571 (1971-04-01), Brown et al.
patent: 4665424 (1987-05-01), Hirao
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 4789885 (1988-12-01), Brighton et al.
patent: 4990991 (1991-02-01), Ikeda et al.
IEEE Transactions on Electron Devices, An Analog, Digital BCDMOS Technology With Dielectric Isolation-Devices and Processes, Chih-Yuan Lu et al., vol. 35, No. 2, Feb. 1988.

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