Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S372000, C257S494000, C257S546000, C257S021000, C257S021000, C257S021000, C257S029000
Reexamination Certificate
active
07067883
ABSTRACT:
A lateral high-voltage junction device for over-voltage protection of an MOS circuit includes a substrate having a first junction region separated from a second junction region by a substrate region. An MOS gate electrode overlies the substrate region and is separated therefrom by a gate dielectric layer. Sidewall spacers reside adjacent to opposing sides of the MOS gate electrode and overlie the substrate region. The substrate region is defined by a junction-free semiconductor region between the first and second junction regions. An input protection circuit employs the lateral high-voltage junction device to transfer voltage transients to a ground node.
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Fenty Jesse A.
Jackson Jerome
Lattice Semiconductor Corporation
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