Lateral high breakdown voltage MOSFET and device provided...

Details Lateral high breakdown voltage MOSFET and device provided... Lateral high breakdown voltage MOSFET and device provided...

2005-01-18

2005-01-18

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S500000

Reexamination Certificate

active

06844598

ABSTRACT:
A film thickness of a gate oxide film of a lateral high breakdown voltage MOSFET of a first conduction type is formed with a thickness in which an electric field value to an absolute maximum rated voltage between a source and a drain becomes equal to or less than 4 MV/cm, and a drain diffused layer is formed so that a total amount of impurities therein becomes equal to or more than 2×1012/cm2to reduce an on-resistance of the lateral high breakdown voltage MOSFET while ensuring a breakdown voltage thereof, and to reduce an area of the lateral high breakdown voltage MOSFET.

REFERENCES:
patent: 5216272 (1993-06-01), Kubokoya et al.
patent: 5300451 (1994-04-01), Zambrano
patent: 5973366 (1999-10-01), Tada
patent: 08-236639 (1996-09-01), None
patent: 08-316469 (1996-11-01), None
U.S. Appl. No. 10/308,200, filed May 29, 2002, Gen Tada et al.
J.A. Appels et al., High Voltage Thin Layer Devices (Resurf Devices) (1979), pp. 94-96.

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