Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2005-12-06
2005-12-06
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S235000, C438S309000, C438S316000, C438S322000, C438S325000, C438S327000, C257S183000, C257S197000, C257S198000, C257S565000
Reexamination Certificate
active
06972237
ABSTRACT:
A method for manufacturing a heterojunction bipolar transistor is provided. An intrinsic collector structure is formed on a substrate. An extrinsic base structure partially overlaps the intrinsic collector structure. An intrinsic base structure is formed adjacent the intrinsic collector structure and under the extrinsic base structure. An emitter structure is formed adjacent the intrinsic base structure. An extrinsic collector structure is formed adjacent the intrinsic collector structure. A plurality of contacts is formed through an interlevel dielectric layer to the extrinsic collector structure, the extrinsic base structure, and the emitter structure.
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Chan Lap
Chu Shao-fu Sanford
Li Jian Xun
Verma Purakh Raj
Zheng Jia Zhen
Baumeister B. William
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
Lee, Jr. Granvill D.
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