Lateral gate, vertical drift region transistor

Details Lateral gate, vertical drift region transistor Lateral gate, vertical drift region transistor

1997-08-15

1999-03-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438931, H01L 21338

Patent

active

058770470

ABSTRACT:
This is a method of fabricating a lateral gate, vertical drift region transistor including a semiconductor substrate having a drain on the reverse surface. A doped semiconductor layer is formed on the substrate and a high resistivity region is formed adjacent the surface of the doped layer so as to define a vertical drift region in the doped layer. A lateral channel is formed on the high resistivity region and the doped layer so as to communicate with the vertical drift region. A source is positioned on the lateral channel spaced laterally from the vertical drift region and a gate is positioned on the lateral channel between the drift region and the source.

REFERENCES:
patent: 4888627 (1989-12-01), Pattanyak et al.
patent: 4901127 (1990-02-01), Chow et al.
patent: 5032880 (1991-07-01), Tsunoda
patent: 5396087 (1995-03-01), Baliga
patent: 5543637 (1996-08-01), Baliga
patent: 5681762 (1997-10-01), Baliga
patent: 5780878 (1998-07-01), Bhatnagar et al.

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