Lateral field effect transistor with minimum total on-resistance

Details Lateral field effect transistor with minimum total on-resistance Lateral field effect transistor with minimum total on-resistance

1997-06-24

1999-02-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257401, H01L 2976, H01L 2994, H01L 31062

Patent

active

058698655

ABSTRACT:
In a rectangular lateral field effect transistor including a rectangular active region formed within a semiconductor substrate, and at least one rectangular wiring layer formed on the semiconductor substrate on one side of the rectangular active region, the rectangular active region has a length A in a first direction and a length k.multidot.x in a second direction, the rectangular wiring layer has a length A in the first direction and a length x in the second direction, wherein k is substantially defined by ##EQU1## where A.sub.r is a resistance value of an ON-resistance of said rectangular active region per unit area, and .rho. is a sheet resistance of the rectangular wiring layer.

REFERENCES:
patent: 4845536 (1989-07-01), Heinecke et al.

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