Lateral field-effect-controllable semiconductor component...

Details Lateral field-effect-controllable semiconductor component... Lateral field-effect-controllable semiconductor component...

2004-03-23

2008-09-09

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000

Reexamination Certificate

active

07423325

ABSTRACT:
The present invention relates to a semiconductor component. The component includes a semiconductor body with a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type. The component includes, in the second semiconductor layer, a first terminal zone of the second conduction type, a drift zone of the second conduction type, a channel zone of the first conduction type, which is formed between the first terminal zone and the drift zone, and a second terminal zone of the second conduction type, which is arranged at a distance from the channel zone in the lateral direction of the semiconductor body. The component also includes a first drive electrode and at least one second drive electrode.

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German Office Action for German Application No. 103 13 712.2 mailed May 16, 2007 (5 pages).

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