Lateral epitaxial growth by seeded solidification

Details Lateral epitaxial growth by seeded solidification Lateral epitaxial growth by seeded solidification

1986-02-11

1987-06-02

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 148DIG134, 29576T, C30B 1900

Patent

active

046700889

ABSTRACT:
An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

REFERENCES:
patent: 4214918 (1980-07-01), Gat et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4335198 (1982-06-01), Hanada et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4383883 (1983-05-01), Mizutani

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