Lateral double-diffused mosfet

Details Lateral double-diffused mosfet Lateral double-diffused mosfet

1996-06-03

1997-06-03

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257343, 257401, H01L 2710

Patent

active

056357427

ABSTRACT:
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region formed under the drain region, a source electrode formed on the source openings, a drain electrode formed on the drain openings, and second conductive regions for connecting the drain electrode to the first conductive region. The source and drain openings are cyclically arranged so that at least two rows of source openings are arranged between adjacent drain openings, to reduce the ON resistance of the MOSFET.

REFERENCES:
patent: 4873503 (1989-10-01), Daleo et al.
patent: 4890142 (1989-12-01), Tonnel et al.
patent: 5004705 (1991-04-01), Blackstone
patent: 5192989 (1993-03-01), Metsushita et al.

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