Lateral double diffused MOS transistors

Details Lateral double diffused MOS transistors Lateral double diffused MOS transistors

2004-11-03

2009-08-11

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S340000, C257SE29120, C257SE29136

Reexamination Certificate

active

07573097

ABSTRACT:
The specification describes an improved mechanical electrode structure for MOS transistor devices with elongated runners. It recognizes that shrinking the geometry increases the likelihood of mechanical failure of comb electrode geometries. The mechanical integrity of a comb electrode is improved by interconnecting the electrode fingers in a cross-connected grid. In one embodiment, the transistor device is interconnected with gate fingers on a lower metaliization level, typically the first level metal, with the drain interconnected at a higher metal level. That allows the drain fingers to be cross-connected with a vertical separation between drain and gate comb electrodes. The cross-connect members may be further stabilized by adding beam extensions to the cross-connect members. The beam extensions may be anchored in an interlevel dielectric layer for additional support.

REFERENCES:
patent: 5510645 (1996-04-01), Fitch et al.
patent: 2003/0136984 (2003-07-01), Masuda et al.

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