Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-25
2009-02-03
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S342000, C257S346000, C257S401000
Reexamination Certificate
active
07485924
ABSTRACT:
In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
REFERENCES:
patent: 5374843 (1994-12-01), Williams et al.
patent: 5585294 (1996-12-01), Smayling et al.
patent: 2004/0079991 (2004-04-01), Lin et al.
patent: 8321614 (1996-12-01), None
patent: 9205202 (1997-08-01), None
Fukushima Toshihiko
Nakamura Hiroki
Takimoto Takahiro
Birch & Stewart Kolasch & Birch, LLP
Patton Paul E
Sharp Kabushiki Kaisha
Smith Zandra
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