Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257S342000
Reexamination Certificate
active
06894349
ABSTRACT:
A high voltage lateral semiconductor device for integrated circuits with improved breakdown voltage. The semiconductor device comprising a semiconductor body, an extended drain region formed in the semiconductor body, source and drain pockets, a top gate forming a pn junction with the extended drain region, an insulating layer on a surface of the semiconductor body and a gate formed on the insulating layer. In addition, a higher-doped pocket of semiconductor material is formed within the top gate region that has a higher integrated doping than the rest of the top gate region. This higher-doped pocket of semiconductor material does not totally deplete during device operation. Moreover, the gate controls, by field-effect, a flow of current through a channel formed laterally between the source pocket and a nearest point of the extended drain region.
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Eckert George
Fogg and Associates LLC
Intersil America's Inc.
Lundberg Scott V.
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