Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-28
2009-10-27
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256
Reexamination Certificate
active
07608889
ABSTRACT:
A lateral diffusion metal-oxide-semiconductor (LDMOS) structure comprises a gate, a source, a drain and a shallow trench isolation. The shallow trench isolation is formed between the drain and the gate to withstand high voltages, applied to the drain, and is associated with the semiconductor substrate to form a recess. As such, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate. Optionally, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate by 300-1500 angstroms.
REFERENCES:
patent: 6861702 (2005-03-01), Kitamura
Ho Dah-Chuen
Jong Yu-Chang
Tang Chien-Shao
Wang Zhe-Yi
King Anthony
Pizarro Marcos D.
Taiwan Semiconductor Manufacturing Co. Ltd.
WPAT, P.C.
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