Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-10
1999-02-09
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, 257384, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058698752
ABSTRACT:
A lateral diffused MOS transistor formed in a doped epitaxial semiconductor layer on a doped semiconductor substrate includes a source contact to the substrate which comprises a trench in the epitaxial layer filled with conductive material such as doped polysilicon, a refractory metal, or a refractory silicide. By providing a plug as part of the source contact, lateral diffusion of the source contact is reduced, thereby reducing overall pitch of the transistor cell. Further, source contact resistance is reduced by the presence of the conductive plug, and the reduced thermal budget requirements in forming the source contact reduces up diffusion from the doped substrate, thereby reducing parasitic capacitance.
REFERENCES:
patent: 4738936 (1988-04-01), Rice
Patent Abstracts of Japan, vol. 010, No. 379 (E-465), 18 Dec. 1986 & JP 61 172371 A (Matsushita Electric Ind Co Ltd), 4 Aug. 1986, see abstract; figures.
Ishiwaka O et al; "A 2.45 GHz power Ld-MOFSET with reduced source inductance by V-groove connections", International Electron Devices Meeting. Technical Digest (Cat. No. 38CH2252-5), Washington, DC, USA, 1-4 Dec. 1985, New York, NY, USA, IEEE, USA, pp. 166-169 XP002045942.
Patent Abstracts of Japan, vol. 015, No. 470 (E-1139), 28 Nov. 1991 & JP 03 203377 A (NEC Corp), 5 Sep. 1991. see abstract.
Patent Abstracts of Japan, vol. 018, No. 461 (E-1597), 26 Aug. 1994 & JP 06 151846 A (Toshiba Corp), 31 May 1994. see abstract.
Efland T: "Lateral DMOS Structure Development For Advanced Power Technologies" 1 Mar. 1994, Texas Instruments Technical Journal, vol. 11, Nr. 2, pp. 10-24 XP000570018. See figure 2B.
DE 38 16 002 A (Int Rectifier Corp) 8 Dec. 1988 see col. 10, line 57-Line 63; figure 6.
Patent Abstracts of Japan, vol. 009, No. 298 (E-361), 26 Nov. 1985 & JP 60 136377 A (Hitachi Seisakusho KK), 19 Jul. 1985, see abstrac.
Meier Stephen D.
Spectrian
Woodward Henry K.
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