Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-17
2011-11-22
Everhart, Caridad (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE29261, C257SE27060
Reexamination Certificate
active
08063444
ABSTRACT:
Lateral diffused metal oxide semiconductor (LDMOS) devices with electrostatic discharge (ESD) protection capability are presented for integrated circuits. The LDMOS device includes a semiconductor substrate with an epi-layer thereon. Patterned isolations are disposed on the epi-layer, thereby defining a first active region and a second active region. An N-type double diffused drain (NDDD) region is formed in the first active region and a N+doped drain region is disposed in the NDDD region. A P-body diffused region is formed in the second active region, wherein the NDDD region and the P-body diffused region are separated with a predetermined distance exposing the epi-layer. An N+doped source region and a P+diffused region are disposed in the P-body diffused region. A gate structure is disposed between the N+doped source region and the N+doped drain region. An additional heavily doped region is formed between the semiconductor and the epi-layer. The punch-through voltage or the breakdown voltage of the interface can be adapted by regulating the P+ or N+ dosage to exceed the breakdown voltage of the LDNMOS transistor or the LDPMOS transistor. It can be able to effectively reduce the breakdown voltage or the punch-through voltage relative to the semiconductor substrate under the drain region, thus increasing ESD protection.
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Everhart Caridad
Vanguard International Semiconductor Corporation
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