Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256
Reexamination Certificate
active
07915674
ABSTRACT:
An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.
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Hossain et al., Field-plate Effects on the Breakdown Voltage of an Integrated High-voltage LDMOS Transistor, Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, May 2004, p. 237-240, p. 19, IEEE, Kitakyushu, Japan.
Chang Chyh-Yih
Chiu Chen-Ming
Lung Tsuan-Lun
Sun Hsing-Hua
Fitipower Integrated Technology, Inc.
Nirajan Frank R.
Pert Evan
Rodela Eduardo A
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