Lateral bipolar junction transistor in CMOS flow

Details Lateral bipolar junction transistor in CMOS flow Lateral bipolar junction transistor in CMOS flow

2007-10-23

2007-10-23

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S558000, C257S592000, C257SE27015

Reexamination Certificate

active

11239794

ABSTRACT:
An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for core nMOS and MOS; pattern and implants pocket implants I/O nMOS and pMOS; sidewall deposit and etch and then source/drain pattern and implant for nMOS and pMOS. The bipolar transistor is formed by forming emitter and collector contacts by implants used in source/drain regions; forming an emitter by implants done in core pMOS during core pMOS LDD extender; and forming part of an base by pocket implant steps.

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