Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-09
1995-10-03
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257355, H01L 3300
Patent
active
054554357
ABSTRACT:
A late programming mask ROM integrated circuit and a process for producing the same. The mask ROM integrated circuit has a silicon substrate, and a plurality of memory cells formed on the silicon substrate. Each memory cell consists of a transistor element and a diode element electrically connected in series. Each transistor element has a drain layer, a channel layer, a source layer all stacked on the silicon substrate in a substantially vertical direction to form an upright drain/channel/source structure region, and a gate electrode region formed on the silicon substrate. The gate electrode regions and the upright drain/channel/source structure regions of the transistor elements are alternately arranged in an adjacent fashion along a substantially horizontal direction. Each diode element is formed by one upright drain/channel/source structure and a diode layer formed on or under the upright drain/channel/source structure.
REFERENCES:
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 5010386 (1991-04-01), Groover, III
patent: 5072276 (1991-10-01), Malhi et al.
Fu Chien-Chih
Lee Fong-Chun
Pao Shiao-Fen
Wang Nan-Chueh
Meier Stephen D.
Ngo Ngan V.
United Microelectronics Corp.
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