Late process method for trench isolation

Details Late process method for trench isolation Late process method for trench isolation

1996-10-17

1999-02-16

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438432, H01L 2176

Patent

active

058720448

ABSTRACT:
Trenches 72 are formed in substrate 17 late in the fabrication process. In order to avoid trench sidewall stresses that cause defects in the substrate monocrystalline lattice, the trenches are filled after a final thick thermal oxide layer, such as a LOCOS layer 25, is grown. The trenches 72 are also filled after a final deep diffusion, i.e. a diffusion in excess of one micron.

REFERENCES:
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4549927 (1985-10-01), Goth et al.
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4839309 (1989-06-01), Easter et al.
patent: 4884117 (1989-11-01), Neppl et al.
patent: 4987471 (1991-01-01), Easter et al.
patent: 5027184 (1991-06-01), Soclof
patent: 5100830 (1992-03-01), Morita
patent: 5141888 (1992-08-01), Kawaji et al.
patent: 5173436 (1992-12-01), Gill et al.
patent: 5200348 (1993-04-01), Uchida et al.
patent: 5217919 (1993-06-01), Gaul et al.
patent: 5241211 (1993-08-01), Tashiko
patent: 5315144 (1994-05-01), Cherne
patent: 5434446 (1995-07-01), Hilton et al.

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