Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-14
2010-06-22
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S357000, C257SE27063, C438S237000
Reexamination Certificate
active
07741681
ABSTRACT:
A structure and a method for preventing latchup. The structure including: an I/O cell and an ESD protection circuit in a region of an integrated circuit chip containing logic circuits; an electrically conductive through via extending from a bottom surface of the substrate toward a top surface of the substrate between the I/O cell and an ESD protection circuit and at least one of the logic circuits.
REFERENCES:
patent: 7498622 (2009-03-01), Chapman et al.
Chapman Phillip Francis
Collins David S.
Voldman Steven H.
Harding W. Riyon
International Business Machines - Corporation
Landau Matthew C
Schmeiser Olsen & Watts
Wolverton Daren
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