Latchup robust array I/O using through wafer via

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S357000, C257SE27063, C438S237000

Reexamination Certificate

active

07741681

ABSTRACT:
A structure and a method for preventing latchup. The structure including: an I/O cell and an ESD protection circuit in a region of an integrated circuit chip containing logic circuits; an electrically conductive through via extending from a bottom surface of the substrate toward a top surface of the substrate between the I/O cell and an ESD protection circuit and at least one of the logic circuits.

REFERENCES:
patent: 7498622 (2009-03-01), Chapman et al.

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