Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-22
2007-05-22
Le, Vu A. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000
Reexamination Certificate
active
10847317
ABSTRACT:
An integrated circuit preventing latchup. In the integrated circuit, an internal circuit is disposed in a substrate and has a parasitic SCR structure. At least one ESD protection circuit and active area are disposed on the substrate and coupled to a pad. A first current shunting diode has an anode coupled to the pad and a cathode coupled to a first voltage source. A second current shunting diode has a cathode coupled to the pad and an anode coupled to a second voltage source. Minority-carriers guard rings surround the first current shunting diode and the second shunting diode. Distance between the first and second current shunting diodes and the internal circuit, the active area and the ESD protection circuit exceed 80 μm.
REFERENCES:
patent: 5237395 (1993-08-01), Lee
patent: 5287241 (1994-02-01), Puar
patent: 5942932 (1999-08-01), Shen
patent: 5959820 (1999-09-01), Ker et al.
patent: 6309940 (2001-10-01), Lee
patent: 2000-0045936 (2000-07-01), None
patent: 2002-0045016 (2002-06-01), None
Birch & Stewart Kolasch & Birch, LLP
Le Vu A.
Winbond Electronics Corporation
LandOfFree
Latchup prevention method for integrated circuits and device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Latchup prevention method for integrated circuits and device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Latchup prevention method for integrated circuits and device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3813715