Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-09-09
2008-09-09
Lindsay, Jr., Walter (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S431000, C257SE21134, C257S433000, C257S414000, C257SE21456, C257SE23148, C438S003000, C438S015000, C438S016000, C438S048000
Reexamination Certificate
active
10935461
ABSTRACT:
The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystalline materials onto a variety of receiving substrates using energetic beam transfer methods. Also provided is a consumable intermediate comprising a transfer substrate and a transfer material coated thereon, wherein the transfer material may be comprised of pre-formed electronic devices or magnetic materials and crystalline materials that may be transferred to a variety of receiving substrates. Aspects of the present invention may also be used to form multi-device electronic components such as sensor devices, electro-optical devices, communications devices, transmit-receive modules, and phased arrays using the consumable intermediates and transfer methods described herein.
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Handy Erik S.
Kazlas Peter T.
Kunze Joseph Michael
Lindsay, Jr. Walter
Mustapha Abdulfattah
Pepper Hamilton LLP
SI2 Technologies, Inc.
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