Laser separated die with tapered sidewalls for improved...

Details Laser separated die with tapered sidewalls for improved... Laser separated die with tapered sidewalls for improved...

2006-07-18

2006-07-18

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S948000

Reexamination Certificate

active

07078319

ABSTRACT:
A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices.

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