Laser programming of CMOS semiconductor devices using make-link

Details Laser programming of CMOS semiconductor devices using make-link Laser programming of CMOS semiconductor devices using make-link

1993-06-02

1999-09-28

Bowers, Charles

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438129, 438130, H01L 21268

Patent

active

059602635

ABSTRACT:
A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

REFERENCES:
patent: 3733690 (1973-05-01), Rizzi
patent: 4387503 (1983-06-01), Aswell
patent: 4561906 (1985-12-01), Calder
patent: 4783424 (1988-11-01), Ohno
patent: 5008729 (1991-04-01), Wills et al.

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