Laser processing unit, laser processing method, and method...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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Details

C438S796000, C438S797000, C257S527000, C257S616000

Reexamination Certificate

active

07459406

ABSTRACT:
Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time, and manufacturing cost of a semiconductor device. In this invention, a gas at high temperature is locally blown so as to overlap at an irradiation surface of linear laser light. The linear laser light can be obtained by injecting laser light radiated from a laser oscillator into a lens. The gas at high temperature can be obtained by heating a gas which is compressed using a gas compressor, by a nozzle type heater. The heated has is sprayed so as to overlap with the irradiation surface of the linear laser light.

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